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HOME Products Surfece Treatment SiC coated graphite PERMA KOTE™

SiC coated graphite PERMA KOTE™

High-temperature gas-cooled reactors
PERMA KOTE™ is a product created by coating the surface of highly purified isotropic graphite with a fine layer of silicon carbide by means of a proprietary Toyo Tanso Chemical Vapor Deposition (CVD) process.

MOCVD Susceptor
 

Special Graphite

Reflector(Single crystal silicon
manufacturing equipment)

Special Graphite

Pancake susceptor

Pancake susceptor

Barrel susceptor

Barrel susceptor

Characteristics

  • The silicon carbide layer has excellent oxidation resistance, corrosion resistance and chemical resistance.
  • The silicon carbide layer is stable at high temperatures and is extremely hard.
  • Prevents the parting and scattering of graphite particles, and the emission of gas and impurities from the graphite substrate.
  • Both the graphite substrate and silicon carbide layer are of high purity.
  • Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
  • Material is designed so that cracks and delamination do not occur.

Application

  • Susceptor for silicon epitaxial growth
  • Single crystal silicon manufacturing equipment
  • MOCVD susceptors
  • Heaters
  • Heat spreaders
  • Oxidation resistance components

Coating Thickness

Coating Thickness
The standard thickness is 120 μm; however this can be modified within a range of 20 to 500 μm.

Properties/Test Data

Corrosion Resistance

Name Chemical formula Concentration（％） Temperature（℃) Time（h） Change in mass（g/m2）
Hydrofluoric acid HF 47 80 144 -1.0
Hydrochloric acid HCｌ 36 Boiling point 144 0
Sulfuric acid H2SO4 97 110 144 0
Nitric acid HNO3 61 Boiling point 144 0
Hydrofluoric acid + nitric acid HF+HNO3 (1:1） 100 80 288 -1.0
Nitric acid + sulfuric acid HNO3+H2SO4　(1:1） 100 25 288 -1.0
Sodium hydroxide NaOH 20 80 288 0
Phosphoric acid H3PO4 100 100 192 -1.0
Nitrohydrochloric acid HCｌ+HNO3 (3:1) 100 80 192 0

Reactivity with various substances (in a vacuum)

Reactant Chemical Formula 1200℃×3h 1600℃×3h
Aluminum Al ○ △
Boron B ◎ ◎
Cobalt Co △ ×
Chromium Cr △ ×
Copper Cu ○ △
Iron Fe × ×
Molybdenum Mo ◎ ○
Nickel Ni ◎ ×
Lead Pb △ ×
Silicon Si ◎ ○
Tin Sn ◎ △
Tantalum Ta ◎ ◎
Titanium Ti ◎ ○
Vanadium V ◎ ×
Tungsten W ◎ ○
Alumina Al2O3 ◎ ×
Boron oxide B2O3 ◎ ◎
Chromium oxide (Ⅲ) Cr2O3 ◎ ×
Iron oxide (Ⅲ) Fe2O3 × ×
Magnesium oxide MgO ◎ △
Manganese oxide (Ⅳ) MnO2 ◎ ×
Lead oxide(Ⅱ) PbO ○ △
Silicon oxide SiO2 ◎ △
Titanium oxide (Ⅳ) TiO2 ◎ ○
Vanadium oxide (Ⅴ) V2O5 ◎ △
Zirconium oxide (Ⅳ) ZrO2 ◎ ○

◎...No reaction ○...Slight reaction
△...Reaction ×...Significant reaction

Layer Properties

Crystal structure
β-SiC (Cubic system) Structure
β-SiC(Cubic system) Structure
Bulk density 3.2 Mg/m3
Decomposition Temperature 2700℃ or higher
Hardness 2800HK
Electrical Resistivity 0.2 Ω・m （through the fall-of-potential method)
Flexural Strength 170 MPa (through 3-point bending)
Young's Modulus 320 GPa (through the deflection method)

Impurity analysis example mass ppm

Element Content
B 0.15
Na 0.02
Al 0.01
Cr < 0.1
Fe 0.02
Ni < 0.01

*Measurement method: Glow Discharge Mass Spectrometry
*The figures above are measurement examples and are not to be guaranteed.
Before actually using one of our products, please refer to our catalogue and be sure to contact our sales department to consult on selecting the most appropriate grade.