When pulling monocrystalline silicon, melting temperature is extremely high at approximately 1500°C, but isotropic graphite’s excellent thermal durability helps extend product life.

High-purity products are used in environments where it is necessary to avoid contaminants; coating products (PERMA KOTE® and PYROGRAPH®) are used in environments where it is necessary to avoid particles and reactions with desorbed gas and SiO gas; and lightweight, easy-to-handle C/C composites are used in large furnaces.

In the epitaxial process, silicon wafers are heated in an epitaxial furnace to around 1200°C, and vaporized silicon tetrachloride (SiCl4) and silane trichloride (SiHCl3) are added to the furnace to induce epitaxial growth on the surface of the wafers.

PERMA KOTE® susceptors (SiC coated)—which have excellent thermal durability, chemical resistance, and dust resistance—are therefore extensively employed.

Moreover, because susceptors come into contact with the wafers, their dimensional precision and surface roughness affect wafer temperature distribution. SiC layers with high dimensional precision and smoothness are therefore required.

Thanks to proprietary technology for graphite substrate processing and SiC layer control combined with technical support that leverages our superb analytic capabilities, Toyo Tanso can offer the ideal product to suit your requirements.

The MOCVD process involves the use of ammonia (NH3) gas, which makes it impossible to avoid early corrosion when using non-coated graphite, and also requires a high-purity, dust-proof environment. PERMA KOTE® susceptors (SiC coated) are therefore widely employed for their excellent thermal durability and chemical- and dust-resistant properties.

Moreover, because susceptors come into contact with the wafers, their dimensional precision and surface roughness affect wafer temperature distribution. SiC layers with high dimensional precision and smoothness are therefore required.

Thanks to proprietary technology for graphite substrate processing and SiC layer control combined with technical support that leverages our superb analytic capabilities, Toyo Tanso can offer the ideal product to suit your requirements.

Moreover, because susceptors come into contact with the wafers, their dimensional precision and surface roughness affect wafer temperature distribution. SiC layers with high dimensional precision and smoothness are therefore required.

Thanks to proprietary technology for graphite substrate processing and SiC layer control combined with technical support that leverages our superb analytic capabilities, Toyo Tanso can offer the ideal product to suit your requirements.