- Excellent heat resistance.
- Prevents the separation and scattering of graphite powder, as well as the release of gases and impurities from the graphite substrate.
- Excellent resistance to reactions with etching gases.
- Improved adhesion over conventional materials

- Components for single crystal SiC growth
- Components for MOCVD
- High-temperature components

■General Physical Properties

Item	Tantalum Carbide
Bulk Density	14.5Mg/㎥
Melting Point	3985℃
Hardness	1550HK
Electrical Resistivity	0.15μΩ・m
Thermal Conductivity	9 to 22 (W/m·K)
Coefficient of Thermal Expansion	7.1（106/K）

* The above numerical values are those taken from the below source and are not guaranteed values.
Source: H. Holleck: Material selection for hard coatings, J. Vac. Sci. Technol. A, Vol.4, No.6, Nov/Dec 1986

■Reactivity with Various Substances

Tantalum carbide (TaC) is a material with high chemical stability and heat resistance. Even at temperatures exceeding 1000°C, it exhibits excellent resistance to various process gases, such as hydrogen (H₂), hydrogen chloride (HCl), and ammonia (NH₃). However, in an oxygen-containing atmosphere, oxidation proceeds at temperatures of approximately 600°C or higher, resulting in the formation of tantalum oxide (Ta₂O₅) on the surface.

*1　The figure above is measurement example, and is not guaranteed.
*2　Fourier-transform infrared spectroscopy (FT-IR) wavelength range: 2.5-14 μm

Element	Content
B	< 0.01
N	< 75
Mg	< 0.05
Al	< 0.01
Si	0.16
P	0.13
S	<0.01
Cl	0.49
Ca	< 0.05
Ti	< 0.005
V	< 0.005
Cr	0.13
Fe	0.52
Co	< 0.05
Ni	0.03
Cu	<0.05
Zn	< 0.05
As	< 0.1
Nb	1.6
Mo	1.0

*1 < :Detection limit
*2 The figures above are measurement examples and are not to be guaranteed.